Nanoparticle deposition in hydrogenated amorphous silicon films during rf plasma deposition
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چکیده
The following article appeared in "Nanoparticle deposition in hydrogenated amorphous silicon films during rf plasma deposition," D.
منابع مشابه
Effect of Post-Deposition Annealing On Hydrogenated Amorphous Silicon Thin Films Grown At High Power by Pecvd
The crystallization of hydrogenated amorphous silicon layers (a-Si:H) [1,2] deposited by plasma enhanced chemical vapor deposition (PECVD) is of great interest. Generally, laser or metals are used to induce crystallization in aSi:H films. We have found that films deposited at high rf power (> 0.2 W/cm2) by PECVD technique shows some crystallites embedded in a-Si:H matrix and their after its vac...
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